FQA9N50 Specs and Replacement
Type Designator: FQA9N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-3P
FQA9N50 substitution
- MOSFET ⓘ Cross-Reference Search
FQA9N50 datasheet
fqa9n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been e... See More ⇒
fqa9n90c.pdf
July 2007 QFET FQA9N90C 900V N-Channel MOSFET Features Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fa... See More ⇒
fqa9n90 f109.pdf
April 2013 FQA9N90_F109 N-Channel QFET MOSFET 900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 55 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF) techn... See More ⇒
Detailed specifications: FQA7N60, FQA7N80, FQA7N80C, FQA7N90, FQA7N90M, FQA85N06, FQA8N90C, FQA90N10V2, IRFP260N, FQA9N90C, FQAF10N80, FQAF11N40, FQAF11N90, FQAF12N60, FQAF12P20, FQAF14N30, FQAF15N70
Keywords - FQA9N50 MOSFET specs
FQA9N50 cross reference
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FQA9N50 replacement
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History: FQA44N10
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