Справочник MOSFET. FQA9N50

 

FQA9N50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQA9N50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 28 nC
   trⓘ - Время нарастания: 95 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.73 Ohm
   Тип корпуса: TO-3P

 Аналог (замена) для FQA9N50

 

 

FQA9N50 Datasheet (PDF)

 ..1. Size:690K  fairchild semi
 fqa9n50.pdf

FQA9N50 FQA9N50

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.6A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been e

 9.1. Size:799K  fairchild semi
 fqa9n90c.pdf

FQA9N50 FQA9N50

July 2007 QFETFQA9N90C 900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to Fa

 9.2. Size:804K  fairchild semi
 fqa9n90c f109.pdf

FQA9N50 FQA9N50

July 2007 QFETFQA9N90C_F109900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

 9.3. Size:1054K  fairchild semi
 fqa9n90 f109.pdf

FQA9N50 FQA9N50

April 2013FQA9N90_F109N-Channel QFET MOSFET900 V, 8.6 A, 1.3 Features Description 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 55 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 25 pF)techn

 9.4. Size:2910K  onsemi
 fqa9n90c f109.pdf

FQA9N50 FQA9N50

April 2014FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Features Description 9 A, 900 V, RDS(on) = 1.4 (Max.) @ VGS = 10 V, ID = 4.5 AThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 45 nC)stripe and DMOS technology. This advanced MOSFET Low Crss . 14 pF)technology

 9.5. Size:1104K  onsemi
 fqa9n90 f109.pdf

FQA9N50 FQA9N50

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