FQAF22P10 Datasheet and Replacement
Type Designator: FQAF22P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO-3PF
FQAF22P10 substitution
FQAF22P10 Datasheet (PDF)
fqaf22p10.pdf

TMQFETFQAF22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.6A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 40 nC)planar stripe, DMOS technology. Low Crss ( typically 160 pF)This advanced technology has been especially tailored
fqaf28n15.pdf

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 22A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es
Datasheet: FQAF15N70 , FQAF16N25 , FQAF16N25C , FQAF17N40 , FQAF17P10 , FQAF19N20 , FQAF19N20L , FQAF19N60 , SKD502T , FQAF28N15 , FQAF33N10 , FQAF33N10L , FQAF34N25 , FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 .
History: HM75N75K | SIHFI640G | FQD3N50CTM | IRF7607PBF | HM75N80 | CS2N65A3HY | P0903BT
Keywords - FQAF22P10 MOSFET datasheet
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FQAF22P10 replacement
History: HM75N75K | SIHFI640G | FQD3N50CTM | IRF7607PBF | HM75N80 | CS2N65A3HY | P0903BT



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