FQAF58N08 Specs and Replacement

Type Designator: FQAF58N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO-3PF

FQAF58N08 substitution

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FQAF58N08 datasheet

 ..1. Size:612K  fairchild semi
 fqaf58n08.pdf pdf_icon

FQAF58N08

December 2000 TM QFET QFET QFET QFET FQAF58N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.024 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology is espe... See More ⇒

 9.1. Size:660K  fairchild semi
 fqaf5n90.pdf pdf_icon

FQAF58N08

September 2000 TM QFET QFET QFET QFET FQAF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has b... See More ⇒

Detailed specifications: FQAF28N15, FQAF33N10, FQAF33N10L, FQAF34N25, FQAF40N25, FQAF44N08, FQAF44N10, FQAF47P06, SPP20N60C3, FQAF5N90, FQAF65N06, FQAF6N80, FQAF6N90, FQAF70N15, FQAF7N80, FQAF7N90, FQAF8N80

Keywords - FQAF58N08 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.