All MOSFET. FQAF58N08 Datasheet

 

FQAF58N08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQAF58N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-3PF

 FQAF58N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQAF58N08 Datasheet (PDF)

 ..1. Size:612K  fairchild semi
 fqaf58n08.pdf

FQAF58N08 FQAF58N08

December 2000TMQFETQFETQFETQFETFQAF58N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.024 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology is espe

 9.1. Size:660K  fairchild semi
 fqaf5n90.pdf

FQAF58N08 FQAF58N08

September 2000TMQFETQFETQFETQFETFQAF5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has b

Datasheet: FQAF28N15 , FQAF33N10 , FQAF33N10L , FQAF34N25 , FQAF40N25 , FQAF44N08 , FQAF44N10 , FQAF47P06 , STP80NF70 , FQAF5N90 , FQAF65N06 , FQAF6N80 , FQAF6N90 , FQAF70N15 , FQAF7N80 , FQAF7N90 , FQAF8N80 .

History: NCE60T2K2I

 

 
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