All MOSFET. FQAF58N08 Datasheet

 

FQAF58N08 Datasheet and Replacement


   Type Designator: FQAF58N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-3PF
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FQAF58N08 Datasheet (PDF)

 ..1. Size:612K  fairchild semi
 fqaf58n08.pdf pdf_icon

FQAF58N08

December 2000TMQFETQFETQFETQFETFQAF58N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 44A, 80V, RDS(on) = 0.024 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology is espe

 9.1. Size:660K  fairchild semi
 fqaf5n90.pdf pdf_icon

FQAF58N08

September 2000TMQFETQFETQFETQFETFQAF5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has b

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: APT40M70JVFR | 2SK4096LS | UT8205A | CET0215 | ZXMN6A07FTA | AM2336N-T1 | WML11N80M3

Keywords - FQAF58N08 MOSFET datasheet

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