FQAF8N80 Specs and Replacement
Type Designator: FQAF8N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-3PF
FQAF8N80 substitution
- MOSFET ⓘ Cross-Reference Search
FQAF8N80 datasheet
fqaf8n80.pdf
March 2001 TM QFET FQAF8N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.9A, 800V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored ... See More ⇒
Detailed specifications: FQAF58N08, FQAF5N90, FQAF65N06, FQAF6N80, FQAF6N90, FQAF70N15, FQAF7N80, FQAF7N90, IRFB3607, FQAF90N08, FQAF9N50, FQAF9P25, FQB10N20C, FQB10N20LTM, FQB10N60CTM, FQB11N40CTM, FQB11N40TM
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