All MOSFET. FQAF8N80 Datasheet

 

FQAF8N80 Datasheet and Replacement


   Type Designator: FQAF8N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-3PF
 

 FQAF8N80 substitution

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FQAF8N80 Datasheet (PDF)

 ..1. Size:690K  fairchild semi
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FQAF8N80

March 2001TMQFETFQAF8N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.9A, 800V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored

Datasheet: FQAF58N08 , FQAF5N90 , FQAF65N06 , FQAF6N80 , FQAF6N90 , FQAF70N15 , FQAF7N80 , FQAF7N90 , IRFB3607 , FQAF90N08 , FQAF9N50 , FQAF9P25 , FQB10N20C , FQB10N20LTM , FQB10N60CTM , FQB11N40CTM , FQB11N40TM .

History: JCS8N65R | NCEP050N12 | JCS8N60VC | CMPF5462 | SSF4624 | FQB10N60CTM | FQB10N20C

Keywords - FQAF8N80 MOSFET datasheet

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