FQB14N30TM Datasheet and Replacement
Type Designator: FQB14N30TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: D2-PAK
FQB14N30TM substitution
FQB14N30TM Datasheet (PDF)
fqb14n30tm.pdf

October 2008QFETFQB14N30 / FQI14N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 14.4A, 300V, RDS(on) = 0.29 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especi
fqb14n15.pdf

May 2000TMQFETQFETQFETQFETFQB14N15 / FQI14N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 14A, 150V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 22 pF)This advanced technology h
Datasheet: FQB12P10TM , FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 , 2N60 , FQB15P12TM , FQB16N15TM , FQB16N25CTM , FQB16N25TM , FQB17N08LTM , FQB17N08TM , FQB17P06TM , FQB17P10TM .
History: MS5N60
Keywords - FQB14N30TM MOSFET datasheet
FQB14N30TM cross reference
FQB14N30TM equivalent finder
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FQB14N30TM replacement
History: MS5N60



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