All MOSFET. FQB14N30TM Datasheet

 

FQB14N30TM Datasheet and Replacement


   Type Designator: FQB14N30TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: D2-PAK
 

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FQB14N30TM Datasheet (PDF)

 ..1. Size:926K  fairchild semi
 fqb14n30tm.pdf pdf_icon

FQB14N30TM

October 2008QFETFQB14N30 / FQI14N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 14.4A, 300V, RDS(on) = 0.29 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especi

 8.1. Size:748K  fairchild semi
 fqb14n15.pdf pdf_icon

FQB14N30TM

May 2000TMQFETQFETQFETQFETFQB14N15 / FQI14N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 14A, 150V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 22 pF)This advanced technology h

Datasheet: FQB12P10TM , FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 , 2N60 , FQB15P12TM , FQB16N15TM , FQB16N25CTM , FQB16N25TM , FQB17N08LTM , FQB17N08TM , FQB17P06TM , FQB17P10TM .

History: GSM4936S | CHM72A3NGP

Keywords - FQB14N30TM MOSFET datasheet

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