FQB14N30TM Specs and Replacement
Type Designator: FQB14N30TM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: D2-PAK
FQB14N30TM substitution
- MOSFET ⓘ Cross-Reference Search
FQB14N30TM datasheet
fqb14n30tm.pdf
October 2008 QFET FQB14N30 / FQI14N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14.4A, 300V, RDS(on) = 0.29 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especi... See More ⇒
fqb14n15.pdf
May 2000 TM QFET QFET QFET QFET FQB14N15 / FQI14N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 150V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 22 pF) This advanced technology h... See More ⇒
Detailed specifications: FQB12P10TM, FQB12P20TM, FQB13N06LTM, FQB13N06TM, FQB13N10LTM, FQB13N10, FQB13N50CTM, FQB14N15, 20N50, FQB15P12TM, FQB16N15TM, FQB16N25CTM, FQB16N25TM, FQB17N08LTM, FQB17N08TM, FQB17P06TM, FQB17P10TM
Keywords - FQB14N30TM MOSFET specs
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