All MOSFET. FQB15P12TM Datasheet

 

FQB15P12TM Datasheet and Replacement


   Type Designator: FQB15P12TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: D2-PAK
 

 FQB15P12TM substitution

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FQB15P12TM Datasheet (PDF)

 ..1. Size:650K  fairchild semi
 fqb15p12tm fqi15p12tu.pdf pdf_icon

FQB15P12TM

QFETFQB15P12 / FQI15P12120V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 110 pF)This advanced technology has been especially tailore

Datasheet: FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM , FQB13N10 , FQB13N50CTM , FQB14N15 , FQB14N30TM , CS150N03A8 , FQB16N15TM , FQB16N25CTM , FQB16N25TM , FQB17N08LTM , FQB17N08TM , FQB17P06TM , FQB17P10TM , FQB19N10LTM .

History: SM4025PSFP | AP6982GN2 | HM2302BWSR | 7N60L-TF3-T | MX2N4091 | 2SK2402 | AOW66616

Keywords - FQB15P12TM MOSFET datasheet

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