FQB15P12TM Specs and Replacement
Type Designator: FQB15P12TM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: D2-PAK
FQB15P12TM substitution
- MOSFET ⓘ Cross-Reference Search
FQB15P12TM datasheet
fqb15p12tm fqi15p12tu.pdf
QFET FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 110 pF) This advanced technology has been especially tailore... See More ⇒
Detailed specifications: FQB12P20TM, FQB13N06LTM, FQB13N06TM, FQB13N10LTM, FQB13N10, FQB13N50CTM, FQB14N15, FQB14N30TM, IRF520, FQB16N15TM, FQB16N25CTM, FQB16N25TM, FQB17N08LTM, FQB17N08TM, FQB17P06TM, FQB17P10TM, FQB19N10LTM
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