All MOSFET. FQB15P12TM Datasheet

 

FQB15P12TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB15P12TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: D2-PAK

 FQB15P12TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB15P12TM Datasheet (PDF)

 ..1. Size:650K  fairchild semi
 fqb15p12tm fqi15p12tu.pdf

FQB15P12TM FQB15P12TM

QFETFQB15P12 / FQI15P12120V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 110 pF)This advanced technology has been especially tailore

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SJ411

 

 
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