All MOSFET. FQB20N06TM Datasheet

 

FQB20N06TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB20N06TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.5 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D2-PAK

 FQB20N06TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB20N06TM Datasheet (PDF)

 ..1. Size:669K  fairchild semi
 fqb20n06tm.pdf

FQB20N06TM FQB20N06TM

May 2001TMQFETFQB20N06 / FQI20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

 6.1. Size:681K  fairchild semi
 fqb20n06ltm.pdf

FQB20N06TM FQB20N06TM

May 2001TMQFETFQB20N06L / FQI20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been esp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDP52N20

 

 
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