All MOSFET. FQB24N08TM Datasheet

 

FQB24N08TM Datasheet and Replacement


   Type Designator: FQB24N08TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D2-PAK
 

 FQB24N08TM substitution

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FQB24N08TM Datasheet (PDF)

 ..1. Size:719K  fairchild semi
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FQB24N08TM

August 2000TMQFETQFETQFETQFETFQB24N08 / FQI24N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 80V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology h

Datasheet: FQB19N20CTM , FQB19N20LTM , FQB19N20TM , FQB1N60TM , FQB1P50TM , FQB20N06LTM , FQB20N06TM , FQB22P10TM , 8N60 , FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , FQB2N50TM , FQB2N60TM , FQB2N80TM , FQB2N90TM .

History: 2SJ606 | CS6N80ARH | PSMN7R0-30YL | UTT6NP10G-S08-R | SIA537EDJ | FDD8586 | QM2N7002E3K1

Keywords - FQB24N08TM MOSFET datasheet

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