FQB24N08TM Specs and Replacement

Type Designator: FQB24N08TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: D2-PAK

FQB24N08TM substitution

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FQB24N08TM datasheet

 ..1. Size:719K  fairchild semi
 fqb24n08tm.pdf pdf_icon

FQB24N08TM

August 2000 TM QFET QFET QFET QFET FQB24N08 / FQI24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 24A, 80V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology h... See More ⇒

Detailed specifications: FQB19N20CTM, FQB19N20LTM, FQB19N20TM, FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, FQB22P10TM, IRFB7545, FQB25N33TM, FQB27N25TMAM002, FQB27P06TM, FQB2N30TM, FQB2N50TM, FQB2N60TM, FQB2N80TM, FQB2N90TM

Keywords - FQB24N08TM MOSFET specs

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