All MOSFET. FQB24N08TM Datasheet

 

FQB24N08TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB24N08TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D2-PAK

 FQB24N08TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB24N08TM Datasheet (PDF)

 ..1. Size:719K  fairchild semi
 fqb24n08tm.pdf

FQB24N08TM FQB24N08TM

August 2000TMQFETQFETQFETQFETFQB24N08 / FQI24N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 80V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology h

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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