All MOSFET. FQB2P40TM Datasheet

 

FQB2P40TM Datasheet and Replacement


   Type Designator: FQB2P40TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: D2-PAK
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FQB2P40TM Datasheet (PDF)

 ..1. Size:585K  fairchild semi
 fqb2p40tm.pdf pdf_icon

FQB2P40TM

December 2000TMQFETQFETQFETQFETFQB2P40 / FQI2P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.0A, -400V, RDS(on) = 6.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced techno

 9.1. Size:559K  fairchild semi
 fqb2p25tm fqi2p25tu.pdf pdf_icon

FQB2P40TM

April 2000TMQFETQFETQFETQFETFQB2P25 / FQI2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technolo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSF1530 | IRFB3004GPBF | BRCS200P03DP | FDC3535 | GP1M008A050XG | TSM4424CS | LKK47-06C5

Keywords - FQB2P40TM MOSFET datasheet

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 FQB2P40TM equivalent finder
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 FQB2P40TM replacement

 

 
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