All MOSFET. FQB2P40TM Datasheet

 

FQB2P40TM Datasheet and Replacement


   Type Designator: FQB2P40TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: D2-PAK
 

 FQB2P40TM substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQB2P40TM Datasheet (PDF)

 ..1. Size:585K  fairchild semi
 fqb2p40tm.pdf pdf_icon

FQB2P40TM

December 2000TMQFETQFETQFETQFETFQB2P40 / FQI2P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.0A, -400V, RDS(on) = 6.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced techno

 9.1. Size:559K  fairchild semi
 fqb2p25tm fqi2p25tu.pdf pdf_icon

FQB2P40TM

April 2000TMQFETQFETQFETQFETFQB2P25 / FQI2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technolo

Datasheet: FQB27P06TM , FQB2N30TM , FQB2N50TM , FQB2N60TM , FQB2N80TM , FQB2N90TM , FQB2NA90TM , FQB2P25TM , IRFP064N , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , FQB32N20CTM , FQB33N10LTM , FQB33N10TM , FQB34N20LTM , FQB34N20TMAM002 .

History: PMN40ENE | FQB2P25TM | VBM1302 | VBM1303 | STP8NS25FP | STP90N6F6 | AON7611

Keywords - FQB2P40TM MOSFET datasheet

 FQB2P40TM cross reference
 FQB2P40TM equivalent finder
 FQB2P40TM lookup
 FQB2P40TM substitution
 FQB2P40TM replacement

 

 
Back to Top

 


 
.