All MOSFET. FQB32N12V2TM Datasheet

 

FQB32N12V2TM Datasheet and Replacement


   Type Designator: FQB32N12V2TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: D2-PAK
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FQB32N12V2TM Datasheet (PDF)

 ..1. Size:647K  fairchild semi
 fqb32n12v2tm.pdf pdf_icon

FQB32N12V2TM

QFETFQB32N12V2/FQI32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailored

 8.1. Size:1201K  fairchild semi
 fqb32n20ctm.pdf pdf_icon

FQB32N12V2TM

October 2008QFETFQB32N20C/FQI32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been espec

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History: HRLU150N10K

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