FQB32N12V2TM Specs and Replacement
Type Designator: FQB32N12V2TM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: D2-PAK
FQB32N12V2TM substitution
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FQB32N12V2TM datasheet
fqb32n12v2tm.pdf
QFET FQB32N12V2/FQI32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32A, 120V, RDS(on) = 0.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been especially tailored... See More ⇒
fqb32n20ctm.pdf
October 2008 QFET FQB32N20C/FQI32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been espec... See More ⇒
Detailed specifications: FQB2N60TM, FQB2N80TM, FQB2N90TM, FQB2NA90TM, FQB2P25TM, FQB2P40TM, FQB30N06LTM, FQB30N06TM, IRF740, FQB32N20CTM, FQB33N10LTM, FQB33N10TM, FQB34N20LTM, FQB34N20TMAM002, FQB34P10TM, FQB3N25TM, FQB3N30TM
Keywords - FQB32N12V2TM MOSFET specs
FQB32N12V2TM cross reference
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FQB32N12V2TM replacement
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