All MOSFET. FQB32N20CTM Datasheet

 

FQB32N20CTM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB32N20CTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 82.5 nC
   trⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: D2-PAK

 FQB32N20CTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB32N20CTM Datasheet (PDF)

 ..1. Size:1201K  fairchild semi
 fqb32n20ctm.pdf

FQB32N20CTM FQB32N20CTM

October 2008QFETFQB32N20C/FQI32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been espec

 8.1. Size:647K  fairchild semi
 fqb32n12v2tm.pdf

FQB32N20CTM FQB32N20CTM

QFETFQB32N12V2/FQI32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailored

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ246L | BUK7Y25-40B

 

 
Back to Top