All MOSFET. FQB32N20CTM Datasheet

 

FQB32N20CTM Datasheet and Replacement


   Type Designator: FQB32N20CTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: D2-PAK
 

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FQB32N20CTM Datasheet (PDF)

 ..1. Size:1201K  fairchild semi
 fqb32n20ctm.pdf pdf_icon

FQB32N20CTM

October 2008QFETFQB32N20C/FQI32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been espec

 8.1. Size:647K  fairchild semi
 fqb32n12v2tm.pdf pdf_icon

FQB32N20CTM

QFETFQB32N12V2/FQI32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailored

Datasheet: FQB2N80TM , FQB2N90TM , FQB2NA90TM , FQB2P25TM , FQB2P40TM , FQB30N06LTM , FQB30N06TM , FQB32N12V2TM , IRF840 , FQB33N10LTM , FQB33N10TM , FQB34N20LTM , FQB34N20TMAM002 , FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - FQB32N20CTM MOSFET datasheet

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