FQB3P20TM Specs and Replacement

Type Designator: FQB3P20TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: D2-PAK

FQB3P20TM substitution

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FQB3P20TM datasheet

 ..1. Size:558K  fairchild semi
 fqb3p20tm fqi3p20tu.pdf pdf_icon

FQB3P20TM

April 2000 TM QFET QFET QFET QFET FQB3P20 / FQI3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technolo... See More ⇒

 9.1. Size:645K  fairchild semi
 fqb3p50tm fqb3p50 fqi3p50 fqi3p50tu.pdf pdf_icon

FQB3P20TM

August 2000 TM QFET QFET QFET QFET FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -2.7A, -500V, RDS(on) = 4.9 @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 1... See More ⇒

Detailed specifications: FQB34N20LTM, FQB34N20TMAM002, FQB34P10TM, FQB3N25TM, FQB3N30TM, FQB3N40TM, FQB3N60CTM, FQB3N90TM, IRF640N, FQB3P50TM, FQB46N15TMAM002, FQB47P06TMAM002, FQB4N20LTM, FQB4N20TM, FQB4N25TM, FQB4N50TM, FQB4N90TM

Keywords - FQB3P20TM MOSFET specs

 FQB3P20TM cross reference

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