All MOSFET. FQB3P20TM Datasheet

 

FQB3P20TM Datasheet and Replacement


   Type Designator: FQB3P20TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: D2-PAK
 

 FQB3P20TM substitution

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FQB3P20TM Datasheet (PDF)

 ..1. Size:558K  fairchild semi
 fqb3p20tm fqi3p20tu.pdf pdf_icon

FQB3P20TM

April 2000TMQFETQFETQFETQFETFQB3P20 / FQI3P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, RDS(on) = 2.7 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technolo

 9.1. Size:645K  fairchild semi
 fqb3p50tm fqb3p50 fqi3p50 fqi3p50tu.pdf pdf_icon

FQB3P20TM

August 2000TMQFETQFETQFETQFETFQB3P50 / FQI3P50500V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -2.7A, -500V, RDS(on) = 4.9 @VGS = -10 VThis advanced technology has been especially tailored to Low gate charge ( typical 1

Datasheet: FQB34N20LTM , FQB34N20TMAM002 , FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , FQB3N60CTM , FQB3N90TM , IRF630 , FQB3P50TM , FQB46N15TMAM002 , FQB47P06TMAM002 , FQB4N20LTM , FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM .

History: RTQ020N03 | SI1031R | RU20P7C-I | DAMH300N150 | AFP1433 | AOL1458 | IXTX60N50L2

Keywords - FQB3P20TM MOSFET datasheet

 FQB3P20TM cross reference
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