All MOSFET. FQB46N15TMAM002 Datasheet

 

FQB46N15TMAM002 Datasheet and Replacement


   Type Designator: FQB46N15TMAM002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 45.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 320 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: D2-PAK
 

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FQB46N15TMAM002 Datasheet (PDF)

 4.1. Size:764K  fairchild semi
 fqb46n15tm am002.pdf pdf_icon

FQB46N15TMAM002

April 2000TMQFETQFETQFETQFETFQB46N15 / FQI46N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced techno

 6.1. Size:728K  fairchild semi
 fqb46n15 fqi46n15.pdf pdf_icon

FQB46N15TMAM002

April 2000TMQFETQFETQFETQFETFQB46N15 / FQI46N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced techno

Datasheet: FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , FQB3N60CTM , FQB3N90TM , FQB3P20TM , FQB3P50TM , IRFB4227 , FQB47P06TMAM002 , FQB4N20LTM , FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM , FQB4P25TM , FQB4P40TM .

History: MPTD50N60N | IXTA120P065T | SI7407DN

Keywords - FQB46N15TMAM002 MOSFET datasheet

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