FQB46N15TMAM002 Specs and Replacement

Type Designator: FQB46N15TMAM002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 45.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 320 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: D2-PAK

FQB46N15TMAM002 substitution

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FQB46N15TMAM002 datasheet

 4.1. Size:764K  fairchild semi
 fqb46n15tm am002.pdf pdf_icon

FQB46N15TMAM002

April 2000 TM QFET QFET QFET QFET FQB46N15 / FQI46N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced techno... See More ⇒

 6.1. Size:728K  fairchild semi
 fqb46n15 fqi46n15.pdf pdf_icon

FQB46N15TMAM002

April 2000 TM QFET QFET QFET QFET FQB46N15 / FQI46N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced techno... See More ⇒

Detailed specifications: FQB34P10TM, FQB3N25TM, FQB3N30TM, FQB3N40TM, FQB3N60CTM, FQB3N90TM, FQB3P20TM, FQB3P50TM, AO3400, FQB47P06TMAM002, FQB4N20LTM, FQB4N20TM, FQB4N25TM, FQB4N50TM, FQB4N90TM, FQB4P25TM, FQB4P40TM

Keywords - FQB46N15TMAM002 MOSFET specs

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