FQB46N15TMAM002 Datasheet and Replacement
Type Designator: FQB46N15TMAM002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 45.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 320 nS
Cossⓘ - Output Capacitance: 520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: D2-PAK
FQB46N15TMAM002 substitution
FQB46N15TMAM002 Datasheet (PDF)
fqb46n15tm am002.pdf
April 2000TMQFETQFETQFETQFETFQB46N15 / FQI46N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced techno
fqb46n15 fqi46n15.pdf
April 2000TMQFETQFETQFETQFETFQB46N15 / FQI46N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced techno
Datasheet: FQB34P10TM , FQB3N25TM , FQB3N30TM , FQB3N40TM , FQB3N60CTM , FQB3N90TM , FQB3P20TM , FQB3P50TM , IRF3710 , FQB47P06TMAM002 , FQB4N20LTM , FQB4N20TM , FQB4N25TM , FQB4N50TM , FQB4N90TM , FQB4P25TM , FQB4P40TM .
History: AP85T08GP | 2SK578 | FTK8N65DD | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H
Keywords - FQB46N15TMAM002 MOSFET datasheet
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FQB46N15TMAM002 replacement
History: AP85T08GP | 2SK578 | FTK8N65DD | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H
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