All MOSFET. FQB47P06TMAM002 Datasheet

 

FQB47P06TMAM002 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB47P06TMAM002
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: D2-PAK

 FQB47P06TMAM002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB47P06TMAM002 Datasheet (PDF)

 4.1. Size:1192K  fairchild semi
 fqb47p06tm am002 fqi47p06tu.pdf

FQB47P06TMAM002 FQB47P06TMAM002

October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi

 6.1. Size:1207K  fairchild semi
 fqb47p06 fqi47p06.pdf

FQB47P06TMAM002 FQB47P06TMAM002

October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi

 6.2. Size:1140K  onsemi
 fqb47p06.pdf

FQB47P06TMAM002 FQB47P06TMAM002

FQB47P06P-Channel QFET MOSFET-60 V, -47 A, 26 mFeatures -47 A, -60 V, RDS(on) = 26 m (Max.) @ VGS = .10 V,DescriptionID = -23.5 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 84 nC)produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 320 pF)technology has been esp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY4004P | MTW45N10E | WMJ90N65F2

 

 
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