FQB5P10TM Specs and Replacement

Type Designator: FQB5P10TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: D2-PAK

FQB5P10TM substitution

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FQB5P10TM datasheet

 ..1. Size:653K  fairchild semi
 fqb5p10tm fqi5p10tu.pdf pdf_icon

FQB5P10TM

TM QFET FQB5P10 / FQI5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailore... See More ⇒

 9.1. Size:667K  fairchild semi
 fqb5p20tm.pdf pdf_icon

FQB5P10TM

May 2000 TM QFET QFET QFET QFET FQB5P20 / FQI5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -4.8A, -200V, RDS(on) = 1.4 @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 10 n... See More ⇒

Detailed specifications: FQB5N30TM, FQB5N40TM, FQB5N50CFTM, FQB5N50CTM, FQB5N50TM, FQB5N60CTM, FQB5N60TM, FQB5N90TM, SPP20N60C3, FQB5P20TM, FQB630TM, FQB65N06TM, FQB6N15TM, FQB6N25TM, FQB6N40CTM, FQB6N50, FQB6N60CTM

Keywords - FQB5P10TM MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.