All MOSFET. FQB5P10TM Datasheet

 

FQB5P10TM Datasheet and Replacement


   Type Designator: FQB5P10TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: D2-PAK
 

 FQB5P10TM substitution

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FQB5P10TM Datasheet (PDF)

 ..1. Size:653K  fairchild semi
 fqb5p10tm fqi5p10tu.pdf pdf_icon

FQB5P10TM

TMQFETFQB5P10 / FQI5P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

 9.1. Size:667K  fairchild semi
 fqb5p20tm.pdf pdf_icon

FQB5P10TM

May 2000TMQFETQFETQFETQFETFQB5P20 / FQI5P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -4.8A, -200V, RDS(on) = 1.4 @VGS = -10 VThis advanced technology has been especially tailored to Low gate charge ( typical 10 n

Datasheet: FQB5N30TM , FQB5N40TM , FQB5N50CFTM , FQB5N50CTM , FQB5N50TM , FQB5N60CTM , FQB5N60TM , FQB5N90TM , SPP20N60C3 , FQB5P20TM , FQB630TM , FQB65N06TM , FQB6N15TM , FQB6N25TM , FQB6N40CTM , FQB6N50 , FQB6N60CTM .

Keywords - FQB5P10TM MOSFET datasheet

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