FQB65N06TM Datasheet and Replacement
Type Designator: FQB65N06TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: D2-PAK
FQB65N06TM substitution
FQB65N06TM Datasheet (PDF)
fqb65n06tm.pdf
May 2001TMQFETFQB65N06 / FQI65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially
fqb65n06 fqi65n06.pdf
May 2001TMQFETFQB65N06 / FQI65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially
Datasheet: FQB5N50CTM , FQB5N50TM , FQB5N60CTM , FQB5N60TM , FQB5N90TM , FQB5P10TM , FQB5P20TM , FQB630TM , TK10A60D , FQB6N15TM , FQB6N25TM , FQB6N40CTM , FQB6N50 , FQB6N60CTM , FQB6N60TM , FQB6N70TM , FQB6N80TM .
Keywords - FQB65N06TM MOSFET datasheet
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