FQB65N06TM Specs and Replacement

Type Designator: FQB65N06TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: D2-PAK

FQB65N06TM substitution

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FQB65N06TM datasheet

 ..1. Size:666K  fairchild semi
 fqb65n06tm.pdf pdf_icon

FQB65N06TM

May 2001 TM QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially ... See More ⇒

 6.1. Size:668K  fairchild semi
 fqb65n06 fqi65n06.pdf pdf_icon

FQB65N06TM

May 2001 TM QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially ... See More ⇒

Detailed specifications: FQB5N50CTM, FQB5N50TM, FQB5N60CTM, FQB5N60TM, FQB5N90TM, FQB5P10TM, FQB5P20TM, FQB630TM, 13N50, FQB6N15TM, FQB6N25TM, FQB6N40CTM, FQB6N50, FQB6N60CTM, FQB6N60TM, FQB6N70TM, FQB6N80TM

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.