All MOSFET. FQB65N06TM Datasheet

 

FQB65N06TM Datasheet and Replacement


   Type Designator: FQB65N06TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: D2-PAK
 

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FQB65N06TM Datasheet (PDF)

 ..1. Size:666K  fairchild semi
 fqb65n06tm.pdf pdf_icon

FQB65N06TM

May 2001TMQFETFQB65N06 / FQI65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially

 6.1. Size:668K  fairchild semi
 fqb65n06 fqi65n06.pdf pdf_icon

FQB65N06TM

May 2001TMQFETFQB65N06 / FQI65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 65A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially

Datasheet: FQB5N50CTM , FQB5N50TM , FQB5N60CTM , FQB5N60TM , FQB5N90TM , FQB5P10TM , FQB5P20TM , FQB630TM , TK10A60D , FQB6N15TM , FQB6N25TM , FQB6N40CTM , FQB6N50 , FQB6N60CTM , FQB6N60TM , FQB6N70TM , FQB6N80TM .

History: MS48P25 | AFC1539 | IXFK66N50Q2 | HFS50N06 | HFS630 | SI9433BDY

Keywords - FQB65N06TM MOSFET datasheet

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