All MOSFET. FQD14N15TM Datasheet

 

FQD14N15TM Datasheet and Replacement


   Type Designator: FQD14N15TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: D-PAK
 

 FQD14N15TM substitution

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FQD14N15TM Datasheet (PDF)

 ..1. Size:772K  fairchild semi
 fqd14n15tm.pdf pdf_icon

FQD14N15TM

May 2000TMQFETQFETQFETQFETFQD14N15 / FQU14N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 10A, 150V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 22 pF)This advanced technology h

Datasheet: FQD12P10TF , FQD12P10TM , FQD13N06LTF , FQD13N06LTM , FQD13N06TF , FQD13N06TM , FQD13N10TF , FQD13N10TM , HY1906P , FQD16N15TM , FQD17N08LTF , FQD17N08LTM , FQD17P06TF , FQD17P06TM , FQD18N20V2TF , FQD18N20V2TM , FQD19N10LTF .

History: STY112N65M5 | DMG4822SSD | 7N65L-TN3-R | S15H12S | AP01N40J-HF | BL4N80-D | AOY2610E

Keywords - FQD14N15TM MOSFET datasheet

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