FQD14N15TM Specs and Replacement

Type Designator: FQD14N15TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: D-PAK

FQD14N15TM substitution

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FQD14N15TM datasheet

 ..1. Size:772K  fairchild semi
 fqd14n15tm.pdf pdf_icon

FQD14N15TM

May 2000 TM QFET QFET QFET QFET FQD14N15 / FQU14N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 10A, 150V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 22 pF) This advanced technology h... See More ⇒

Detailed specifications: FQD12P10TF, FQD12P10TM, FQD13N06LTF, FQD13N06LTM, FQD13N06TF, FQD13N06TM, FQD13N10TF, FQD13N10TM, AOD4184A, FQD16N15TM, FQD17N08LTF, FQD17N08LTM, FQD17P06TF, FQD17P06TM, FQD18N20V2TF, FQD18N20V2TM, FQD19N10LTF

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