All MOSFET. FQD1P50TM Datasheet

 

FQD1P50TM MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQD1P50TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: D-PAK

 FQD1P50TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD1P50TM Datasheet (PDF)

 ..1. Size:691K  fairchild semi
 fqd1p50tf fqd1p50tm.pdf

FQD1P50TM FQD1P50TM

January 2009QFETFQD1P50 / FQU1P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.2A, -500V, RDS(on) = 10.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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