All MOSFET. FQD1P50TM Datasheet

 

FQD1P50TM Datasheet and Replacement


   Type Designator: FQD1P50TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: D-PAK
 

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FQD1P50TM Datasheet (PDF)

 ..1. Size:691K  fairchild semi
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FQD1P50TM

January 2009QFETFQD1P50 / FQU1P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.2A, -500V, RDS(on) = 10.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especi

Datasheet: FQD1N50TM , FQD1N60CTF , FQD1N60CTM , FQD1N60TF , FQD1N60TM , FQD1N80TF , FQD1N80TM , FQD1P50TF , 10N60 , FQD20N06L , FQD20N06TF , FQD20N06TM , FQD24N08TF , FQD24N08TM , FQD2N100TF , FQD2N100TM , FQD2N30TM .

History: 1N60L-TMS2-T | SLD65R950S2 | P6803HVG | STD9HN65M2 | 2SK2388 | BUZ61 | TPU65R600M

Keywords - FQD1P50TM MOSFET datasheet

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