All MOSFET. FQD24N08TM Datasheet

 

FQD24N08TM Datasheet and Replacement


   Type Designator: FQD24N08TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 19.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: D-PAK
 

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FQD24N08TM Datasheet (PDF)

 ..1. Size:724K  fairchild semi
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FQD24N08TM

January 2009QFETFQD24N08 / FQU24N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.6A, 80V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especiall

Datasheet: FQD1N80TF , FQD1N80TM , FQD1P50TF , FQD1P50TM , FQD20N06L , FQD20N06TF , FQD20N06TM , FQD24N08TF , IRFB4110 , FQD2N100TF , FQD2N100TM , FQD2N30TM , FQD2N40TF , FQD2N40TM , FQD2N50TF , FQD2N50TM , FQD2N60TF .

History: CJ3439KDW | BSB015N04NX3G | VMO580-02F | UTT6NP10G-S08-R | SIA537EDJ | AM3850C | QM2N7002E3K1

Keywords - FQD24N08TM MOSFET datasheet

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