IRFW710A Datasheet and Replacement
Type Designator: IRFW710A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO263
IRFW710A substitution
IRFW710A Datasheet (PDF)
irfw710b irfi710b.pdf
November 2001IRFW710B / IRFI710B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.7 nC)planar, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially tailored t
Datasheet: IRFW610A , IRFW614A , IRFW620A , IRFW624A , IRFW630A , IRFW634A , IRFW640A , IRFW644A , K4145 , IRFW720A , IRFW730A , IRFW740A , IRFW820A , IRFW830A , IRFW840A , IRFWZ14A , IRFWZ24A .
History: IRFU120N
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History: IRFU120N
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