FQD5N20TF Datasheet. Specs and Replacement
Type Designator: FQD5N20TF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: D-PAK
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FQD5N20TF datasheet
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Detailed specifications: FQD4P25TM, FQD4P40, FQD4P40TF, FQD4P40TM, FQD5N15TF, FQD5N15TM, FQD5N20LTF, FQD5N20LTM, 18N50, FQD5N30TF, FQD5N30TM, FQD5N40TF, FQD5N40TM, FQD5N50, FQD5N50CTF, FQD5N50CTM, FQD5N50TF
Keywords - FQD5N20TF MOSFET specs
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