IRFW820A Datasheet and Replacement
Type Designator: IRFW820A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO263
IRFW820A substitution
IRFW820A Datasheet (PDF)
irfw820a.pdf
Advanced Power MOSFET FEATURESBVDSS = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 3.0 Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 2.000 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
Datasheet: IRFW630A , IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , SPP20N60C3 , IRFW830A , IRFW840A , IRFWZ14A , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C .
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