IRFW820A PDF and Equivalents Search

 

IRFW820A Specs and Replacement

Type Designator: IRFW820A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO263

IRFW820A substitution

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IRFW820A datasheet

 ..1. Size:216K  1
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IRFW820A

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 ..2. Size:504K  samsung
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IRFW820A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 3.0 Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 2.000 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒

 9.1. Size:213K  1
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IRFW820A

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 9.2. Size:195K  1
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IRFW820A

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Detailed specifications: IRFW630A , IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , K3569 , IRFW830A , IRFW840A , IRFWZ14A , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C .

History: FHP3205C

Keywords - IRFW820A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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