All MOSFET. IRFW820A Datasheet

 

IRFW820A Datasheet and Replacement


   Type Designator: IRFW820A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO263
 

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IRFW820A Datasheet (PDF)

 ..1. Size:216K  1
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IRFW820A

 ..2. Size:504K  samsung
 irfw820a.pdf pdf_icon

IRFW820A

Advanced Power MOSFET FEATURESBVDSS = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 3.0 Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 2.000 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 9.1. Size:213K  1
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IRFW820A

 9.2. Size:195K  1
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IRFW820A

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Datasheet: IRFW630A , IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , 2SK3568 , IRFW830A , IRFW840A , IRFWZ14A , IRFWZ24A , IRFWZ34A , IRFWZ44A , IRFY044 , IRFY044C .

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