IRFW820A - описание и поиск аналогов

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 3.0 Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 2.000 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 0.638 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 1.169 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha