IRFW820A - Даташиты. Аналоги. Основные параметры

Advanced Power MOSFET FEATURESBVDSS = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 3.0 Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 2.000 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 0.638 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 1.169 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha