All MOSFET. FQD630TF Datasheet

 

FQD630TF MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD630TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 46 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 19 nC

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: D-PAK

FQD630TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD630TF Datasheet (PDF)

0.1. fqd630tf fqd630tm.pdf Size:853K _fairchild_semi

FQD630TF FQD630TF

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has b

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