IRFWZ44A Datasheet. Specs and Replacement

Type Designator: IRFWZ44A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 126 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO263

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IRFWZ44A datasheet

 ..1. Size:507K  samsung
 irfwz44a.pdf pdf_icon

IRFWZ44A

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max... See More ⇒

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IRFWZ44A

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 irfwz14a irfiz14a.pdf pdf_icon

IRFWZ44A

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 9.3. Size:210K  samsung
 irfwz24a.pdf pdf_icon

IRFWZ44A

IRFW/IZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 Operating Temperature 2 A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.050 (Typ.) 1 1 2 3 3 1. Gate 2. Drai... See More ⇒

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Detailed specifications: IRFW730A, IRFW740A, IRFW820A, IRFW830A, IRFW840A, IRFWZ14A, IRFWZ24A, IRFWZ34A, SPP20N60C3, IRFY044, IRFY044C, IRFY120, IRFY120C, IRFY130, IRFY130C, IRFY140, IRFY140C

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