All MOSFET. IRFWZ44A Datasheet

 

IRFWZ44A Datasheet and Replacement


   Type Designator: IRFWZ44A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 126 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO263
 

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IRFWZ44A Datasheet (PDF)

 ..1. Size:507K  samsung
 irfwz44a.pdf pdf_icon

IRFWZ44A

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Max

 9.1. Size:291K  1
 irfwz34a irfiz34a.pdf pdf_icon

IRFWZ44A

 9.2. Size:273K  1
 irfwz14a irfiz14a.pdf pdf_icon

IRFWZ44A

 9.3. Size:210K  samsung
 irfwz24a.pdf pdf_icon

IRFWZ44A

IRFW/IZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175 Operating Temperature2A (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.050 (Typ.)112331. Gate 2. Drai

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Datasheet: IRFW730A , IRFW740A , IRFW820A , IRFW830A , IRFW840A , IRFWZ14A , IRFWZ24A , IRFWZ34A , TK10A60D , IRFY044 , IRFY044C , IRFY120 , IRFY120C , IRFY130 , IRFY130C , IRFY140 , IRFY140C .

History: F5020 | LND150K1

Keywords - IRFWZ44A MOSFET datasheet

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