FQD6P25TM Specs and Replacement

Type Designator: FQD6P25TM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: D-PAK

FQD6P25TM substitution

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FQD6P25TM datasheet

 ..1. Size:624K  fairchild semi
 fqd6p25tf fqd6p25tm fqu6p25tu.pdf pdf_icon

FQD6P25TM

October 2008 QFET FQD6P25 / FQU6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especia... See More ⇒

Detailed specifications: IRF3808L, IRF3808LPBF, IRF3808PBF, IRF3808SPBF, FQD6N50CTF, FQD6N50CTM, FQD6N60CTM, FQD6P25TF, 75N75, FQD7N10LTF, FQD7N10LTM, FQD7N10TM, FQD7N20LTF, FQD7N20LTM, FQD7N20TF, FQD7N20TM, FQD7N30TF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs