All MOSFET. FQD6P25TM Datasheet

 

FQD6P25TM Datasheet and Replacement


   Type Designator: FQD6P25TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: D-PAK
 

 FQD6P25TM substitution

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FQD6P25TM Datasheet (PDF)

 ..1. Size:624K  fairchild semi
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FQD6P25TM

October 2008QFETFQD6P25 / FQU6P25 250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especia

Datasheet: IRF3808L , IRF3808LPBF , IRF3808PBF , IRF3808SPBF , FQD6N50CTF , FQD6N50CTM , FQD6N60CTM , FQD6P25TF , IRF520 , FQD7N10LTF , FQD7N10LTM , FQD7N10TM , FQD7N20LTF , FQD7N20LTM , FQD7N20TF , FQD7N20TM , FQD7N30TF .

History: SQ2361EES | HTD200P03 | QM2414K | 2N7002NXBK | TSM2312CX | BSC050N03MS | IPB65R190CFDA

Keywords - FQD6P25TM MOSFET datasheet

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