FQD7N20TM Datasheet and Replacement
Type Designator: FQD7N20TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
Package: D-PAK
FQD7N20TM substitution
FQD7N20TM Datasheet (PDF)
fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf

October 2008QFETFQD7N20 / FQU7N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especia
fqd7n20ltf fqd7n20ltm.pdf

October 2008QFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology is especi
fqd7n20l fqu7n20l.pdf

December 2000TMQFETQFETQFETQFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced
fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf

October 2008QFETFQD7N10L / FQU7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology is especia
Datasheet: FQD6P25TF , FQD6P25TM , FQD7N10LTF , FQD7N10LTM , FQD7N10TM , FQD7N20LTF , FQD7N20LTM , FQD7N20TF , STP65NF06 , FQD7N30TF , FQD7N30TM , FQD7P06TF , FQD7P06TM , FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF .
History: AP13P15GS | PZP003BYB | HAF1002L
Keywords - FQD7N20TM MOSFET datasheet
FQD7N20TM cross reference
FQD7N20TM equivalent finder
FQD7N20TM lookup
FQD7N20TM substitution
FQD7N20TM replacement
History: AP13P15GS | PZP003BYB | HAF1002L



LIST
Last Update
MOSFET: JMTN330N06A | JMTN2310A | JMTN11DN10A | JMTM8810KS | JMTM850P04A | JMTM8205B | JMTM8205A | JMTM3415KL | JMTM3406D | JMTM330N06A | JMTM300N03D | JMTM300C02D | JMTM2310A | JMTM170N04A | JMTLB3134K | JMTLB2N7002KDS
Popular searches
ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet