All MOSFET. FQH140N10 Datasheet

 

FQH140N10 Datasheet and Replacement


   Type Designator: FQH140N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 940 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-247
 

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FQH140N10 Datasheet (PDF)

 ..1. Size:680K  fairchild semi
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FQH140N10

TMQFETFQH140N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 220 nC)planar stripe, DMOS technology. Low Crss ( typical 470 pF)This advanced technology has been especially tailored to

Datasheet: FQD7P20TF , FQD7P20TM , FQD8N25TF , FQD8P10TF , FQD8P10TM , FQD9N25TF , FQD9N25TM , FQE10N20CTU , 5N50 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU .

History: APT8030JN | NCE65NF023T | IXTH4N100L | ME2312 | NCE65N330K | AUIRFSL4115 | AP9960GH

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