FQH140N10 Specs and Replacement

Type Designator: FQH140N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 940 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-247

FQH140N10 substitution

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FQH140N10 datasheet

 ..1. Size:680K  fairchild semi
 fqh140n10.pdf pdf_icon

FQH140N10

TM QFET FQH140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has been especially tailored to ... See More ⇒

Detailed specifications: FQD7P20TF, FQD7P20TM, FQD8N25TF, FQD8P10TF, FQD8P10TM, FQD9N25TF, FQD9N25TM, FQE10N20CTU, IRFP064N, FQH18N50V2, FQH44N10F133, FQH70N10, FQH90N15, FQI10N20CTU, FQI10N60CTU, FQI11N40TU, FQI11P06TU

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