FQH18N50V2 Specs and Replacement

Type Designator: FQH18N50V2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 277 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm

Package: TO-247

FQH18N50V2 substitution

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FQH18N50V2 datasheet

 ..1. Size:627K  fairchild semi
 fqh18n50v2.pdf pdf_icon

FQH18N50V2

QFET FQH18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to F... See More ⇒

Detailed specifications: FQD7P20TM, FQD8N25TF, FQD8P10TF, FQD8P10TM, FQD9N25TF, FQD9N25TM, FQE10N20CTU, FQH140N10, AO4468, FQH44N10F133, FQH70N10, FQH90N15, FQI10N20CTU, FQI10N60CTU, FQI11N40TU, FQI11P06TU, FQI12N50TU

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