FQH44N10F133 Specs and Replacement

Type Designator: FQH44N10F133

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 425 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO-247

FQH44N10F133 substitution

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FQH44N10F133 datasheet

 6.1. Size:974K  fairchild semi
 fqh44n10 f133.pdf pdf_icon

FQH44N10F133

Octorber 2008 QFET FQH44N10_F133 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially t... See More ⇒

 6.2. Size:982K  fairchild semi
 fqh44n10.pdf pdf_icon

FQH44N10F133

Octorber 2008 QFET FQH44N10_F133 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially t... See More ⇒

Detailed specifications: FQD8N25TF, FQD8P10TF, FQD8P10TM, FQD9N25TF, FQD9N25TM, FQE10N20CTU, FQH140N10, FQH18N50V2, IRF730, FQH70N10, FQH90N15, FQI10N20CTU, FQI10N60CTU, FQI11N40TU, FQI11P06TU, FQI12N50TU, FQI12N60CTU

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.