All MOSFET. FQH44N10F133 Datasheet

 

FQH44N10F133 Datasheet and Replacement


   Type Designator: FQH44N10F133
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 425 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-247
 

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FQH44N10F133 Datasheet (PDF)

 6.1. Size:974K  fairchild semi
 fqh44n10 f133.pdf pdf_icon

FQH44N10F133

Octorber 2008QFETFQH44N10_F133100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t

 6.2. Size:982K  fairchild semi
 fqh44n10.pdf pdf_icon

FQH44N10F133

Octorber 2008QFETFQH44N10_F133100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t

Datasheet: FQD8N25TF , FQD8P10TF , FQD8P10TM , FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , BS170 , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU , FQI12N50TU , FQI12N60CTU .

History: STD5NK40Z

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