FQH44N10F133 Datasheet and Replacement
Type Designator: FQH44N10F133
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 425 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-247
FQH44N10F133 substitution
FQH44N10F133 Datasheet (PDF)
fqh44n10 f133.pdf
Octorber 2008QFETFQH44N10_F133100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t
fqh44n10.pdf
Octorber 2008QFETFQH44N10_F133100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t
Datasheet: FQD8N25TF , FQD8P10TF , FQD8P10TM , FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , IRFP064N , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU , FQI12N50TU , FQI12N60CTU .
History: 6N70KL-TF3-T | AUIRFSL4115 | NCE65NF023T | ME2312 | AP9960GH | NCE65N330K | IXTH4N100L
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History: 6N70KL-TF3-T | AUIRFSL4115 | NCE65NF023T | ME2312 | AP9960GH | NCE65N330K | IXTH4N100L
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