All MOSFET. FQH70N10 Datasheet

 

FQH70N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQH70N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 85 nC

Rise Time (tr): 470 nS

Drain-Source Capacitance (Cd): 720 pF

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO-247

FQH70N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQH70N10 Datasheet (PDF)

1.1. fqh70n10.pdf Size:666K _fairchild_semi

FQH70N10
FQH70N10

® QFET FQH70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 150 pF) This advanced technology has been especially tailored to • Fa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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