All MOSFET. FQH70N10 Datasheet

 

FQH70N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQH70N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 85 nC

Rise Time (tr): 470 nS

Drain-Source Capacitance (Cd): 720 pF

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO-247

FQH70N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQH70N10 Datasheet (PDF)

1.1. fqh70n10.pdf Size:666K _fairchild_semi

FQH70N10
FQH70N10

® QFET FQH70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 150 pF) This advanced technology has been especially tailored to • Fa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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