FQH70N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQH70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 214 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 85 nC
Rise Time (tr): 470 nS
Drain-Source Capacitance (Cd): 720 pF
Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
Package: TO-247
FQH70N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQH70N10 Datasheet (PDF)
1.1. fqh70n10.pdf 
Size:666K _fairchild_semi
® QFET FQH70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 150 pF) This advanced technology has been especially tailored to • Fa
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