FQH70N10 Datasheet and Replacement
Type Designator: FQH70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 470 nS
Cossⓘ - Output Capacitance: 720 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-247
FQH70N10 substitution
FQH70N10 Datasheet (PDF)
fqh70n10.pdf
QFETFQH70N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 70A, 100V, RDS(on) = 0.023 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 150 pF)This advanced technology has been especially tailored to Fa
Datasheet: FQD8P10TF , FQD8P10TM , FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 , IRFZ44N , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU , FQI12N50TU , FQI12N60CTU , FQI12N60TU .
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