FQH90N15 Datasheet and Replacement
Type Designator: FQH90N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 760 nS
Cossⓘ - Output Capacitance: 1400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO-247
FQH90N15 substitution
FQH90N15 Datasheet (PDF)
fqa90n15 fqh90n15.pdf
October 2006 QFETFQH90N15 / FQA90N15 N-Channel Power MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge (typical 220 nC)stripe, DMOS technology. Low Crss (typical 200 pF)This advanced technology has been especiall
fqh90n15.pdf
October 2006 QFETFQH90N15 / FQA90N15 N-Channel Power MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge (typical 220 nC)stripe, DMOS technology. Low Crss (typical 200 pF)This advanced technology has been especiall
Datasheet: FQD8P10TM , FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , IRF3205 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , FQI11P06TU , FQI12N50TU , FQI12N60CTU , FQI12N60TU , FQI13N06LTU .
History: MTNK7S3 | PV6A4BA | IRFR015 | IXZ2210N50L | IXTH30N50L2 | IXTH12N50A
Keywords - FQH90N15 MOSFET datasheet
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FQH90N15 substitution
FQH90N15 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: MTNK7S3 | PV6A4BA | IRFR015 | IXZ2210N50L | IXTH30N50L2 | IXTH12N50A
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