FQH90N15 Specs and Replacement

Type Designator: FQH90N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 760 nS

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-247

FQH90N15 substitution

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FQH90N15 datasheet

 ..1. Size:1091K  fairchild semi
 fqa90n15 fqh90n15.pdf pdf_icon

FQH90N15

October 2006 QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge (typical 220 nC) stripe, DMOS technology. Low Crss (typical 200 pF) This advanced technology has been especiall... See More ⇒

 ..2. Size:1057K  fairchild semi
 fqh90n15.pdf pdf_icon

FQH90N15

October 2006 QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge (typical 220 nC) stripe, DMOS technology. Low Crss (typical 200 pF) This advanced technology has been especiall... See More ⇒

Detailed specifications: FQD8P10TM, FQD9N25TF, FQD9N25TM, FQE10N20CTU, FQH140N10, FQH18N50V2, FQH44N10F133, FQH70N10, IRF3205, FQI10N20CTU, FQI10N60CTU, FQI11N40TU, FQI11P06TU, FQI12N50TU, FQI12N60CTU, FQI12N60TU, FQI13N06LTU

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