All MOSFET. FQI11N40TU Datasheet

 

FQI11N40TU Datasheet and Replacement


   Type Designator: FQI11N40TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: I2-PAK
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FQI11N40TU Datasheet (PDF)

 ..1. Size:565K  fairchild semi
 fqb11n40tm fqi11n40tu.pdf pdf_icon

FQI11N40TU

November 2001FQB11N40 / FQI11N40400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tai

 9.1. Size:971K  fairchild semi
 fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf pdf_icon

FQI11N40TU

October 2008QFETFQB11P06 / FQI11P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been espec

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History: TK2P60D | IRFBG20

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