All MOSFET. FQI11P06TU Datasheet

 

FQI11P06TU Datasheet and Replacement


   Type Designator: FQI11P06TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 11.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: I2-PAK
 

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FQI11P06TU Datasheet (PDF)

 ..1. Size:971K  fairchild semi
 fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf pdf_icon

FQI11P06TU

October 2008QFETFQB11P06 / FQI11P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been espec

 9.1. Size:565K  fairchild semi
 fqb11n40tm fqi11n40tu.pdf pdf_icon

FQI11P06TU

November 2001FQB11N40 / FQI11N40400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tai

Datasheet: FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , IRF540 , FQI12N50TU , FQI12N60CTU , FQI12N60TU , FQI13N06LTU , FQI13N06TU , FQI13N50CTU , FQI15P12TU , FQI16N25CTU .

History: MDIS4N65BTH | GMM3x180-004X2-SMD

Keywords - FQI11P06TU MOSFET datasheet

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