FQI11P06TU MOSFET PDF: P-Ch, 60V, 11.4A. Full specification with pinout and replacement list

FQI11P06TU PDF Specs

..1. Size:971K fairchild semi
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October 2008 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been espec... See More ⇒

9.1. Size:565K fairchild semi
fqb11n40tm fqi11n40tu.pdf pdf_icon

November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tai... See More ⇒

Detailed specifications: FQH140N10 , FQH18N50V2 , FQH44N10F133 , FQH70N10 , FQH90N15 , FQI10N20CTU , FQI10N60CTU , FQI11N40TU , IRF540N , FQI12N50TU , FQI12N60CTU , FQI12N60TU , FQI13N06LTU , FQI13N06TU , FQI13N50CTU , FQI15P12TU , FQI16N25CTU .