All MOSFET. FQI15P12TU Datasheet

 

FQI15P12TU Datasheet and Replacement


   Type Designator: FQI15P12TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: I2-PAK
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FQI15P12TU Datasheet (PDF)

 ..1. Size:650K  fairchild semi
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FQI15P12TU

QFETFQB15P12 / FQI15P12120V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 110 pF)This advanced technology has been especially tailore

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History: AOT20N60L | SI7194DP | AP2612GY-HF | SSM3K15AMFV | H7N0312LM | ZXM64N035L3 | BUK6246-75C

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