All MOSFET. FQI15P12TU Datasheet

 

FQI15P12TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQI15P12TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: I2-PAK

 FQI15P12TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI15P12TU Datasheet (PDF)

 ..1. Size:650K  fairchild semi
 fqb15p12tm fqi15p12tu.pdf

FQI15P12TU FQI15P12TU

QFETFQB15P12 / FQI15P12120V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 110 pF)This advanced technology has been especially tailore

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 20N03L-TO252 | SIHF530S

 

 
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