All MOSFET. FQI15P12TU Datasheet

 

FQI15P12TU Datasheet and Replacement


   Type Designator: FQI15P12TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: I2-PAK
 

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FQI15P12TU Datasheet (PDF)

 ..1. Size:650K  fairchild semi
 fqb15p12tm fqi15p12tu.pdf pdf_icon

FQI15P12TU

QFETFQB15P12 / FQI15P12120V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -15A, -120V, RDS(on) = 0.2 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 110 pF)This advanced technology has been especially tailore

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History: BLF7G15LS-300P

Keywords - FQI15P12TU MOSFET datasheet

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