FQI2P25TU Datasheet. Specs and Replacement

Type Designator: FQI2P25TU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: I2-PAK

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FQI2P25TU datasheet

 ..1. Size:559K  fairchild semi
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FQI2P25TU

April 2000 TM QFET QFET QFET QFET FQB2P25 / FQI2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technolo... See More ⇒

Detailed specifications: FQI19N20CTU, FQI19N20TU, FQI1P50TU, FQI27N25TU, FQI27P06TU, FQI2N30TU, FQI2N90TU, FQI2NA90TU, 7N65, FQI34P10TU, FQI3N25TU, FQI3N30TU, FQI3N40TU, FQI3N90TU, FQI3P20TU, FQI3P50TU, FQI47P06TU

Keywords - FQI2P25TU MOSFET specs

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