All MOSFET. FQI2P25TU Equivalents Search

 

FQI2P25TU Specs and Replacement


   Type Designator: FQI2P25TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: I2-PAK
 

 FQI2P25TU substitution

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FQI2P25TU Specs

 ..1. Size:559K  fairchild semi
 fqb2p25tm fqi2p25tu.pdf pdf_icon

FQI2P25TU

April 2000 TM QFET QFET QFET QFET FQB2P25 / FQI2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technolo... See More ⇒

Detailed specifications: FQI19N20CTU , FQI19N20TU , FQI1P50TU , FQI27N25TU , FQI27P06TU , FQI2N30TU , FQI2N90TU , FQI2NA90TU , 7N65 , FQI34P10TU , FQI3N25TU , FQI3N30TU , FQI3N40TU , FQI3N90TU , FQI3P20TU , FQI3P50TU , FQI47P06TU .

Keywords - FQI2P25TU MOSFET specs

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