FQI2P25TU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI2P25TU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 2.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 6.5 nC
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
Package: I2-PAK
FQI2P25TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI2P25TU Datasheet (PDF)
1.1. fqi2p25tu.pdf 
Size:559K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQB2P25 / FQI2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technolo
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
