All MOSFET. FQI2P25TU Datasheet

 

FQI2P25TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI2P25TU

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6.5 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: I2-PAK

FQI2P25TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI2P25TU Datasheet (PDF)

1.1. fqi2p25tu.pdf Size:559K _fairchild_semi

FQI2P25TU
FQI2P25TU

April 2000 TM QFET QFET QFET QFET FQB2P25 / FQI2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technolo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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