All MOSFET. FQNL1N50BBU Datasheet

 

FQNL1N50BBU Datasheet and Replacement


   Type Designator: FQNL1N50BBU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO-92L
 

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FQNL1N50BBU Datasheet (PDF)

 ..1. Size:618K  fairchild semi
 fqnl1n50bbu fqnl1n50bta.pdf pdf_icon

FQNL1N50BBU

March 2001TMQFETFQNL1N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especially tailo

 5.1. Size:620K  fairchild semi
 fqnl1n50b.pdf pdf_icon

FQNL1N50BBU

March 2001TMQFETFQNL1N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especially tailo

Datasheet: FQI9N25CTU , FQI9N50CTU , FQI9N50TU , FQL50N40 , FQN1N50CBU , FQN1N50CTA , FQN1N60CBU , FQN1N60CTA , CS150N03A8 , FQNL1N50BTA , FQNL2N50BBU , FQNL2N50BTA , FQP10N20 , FQP10N20CTSTU , FQP10N60 , FQP10N60CF , FQP11N40 .

History: CTLM8110-M832D | HSS2306A

Keywords - FQNL1N50BBU MOSFET datasheet

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