FQNL1N50BBU Specs and Replacement
Type Designator: FQNL1N50BBU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: TO-92L
FQNL1N50BBU substitution
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FQNL1N50BBU datasheet
fqnl1n50bbu fqnl1n50bta.pdf
March 2001 TM QFET FQNL1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especially tailo... See More ⇒
fqnl1n50b.pdf
March 2001 TM QFET FQNL1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especially tailo... See More ⇒
Detailed specifications: FQI9N25CTU, FQI9N50CTU, FQI9N50TU, FQL50N40, FQN1N50CBU, FQN1N50CTA, FQN1N60CBU, FQN1N60CTA, IRF520, FQNL1N50BTA, FQNL2N50BBU, FQNL2N50BTA, FQP10N20, FQP10N20CTSTU, FQP10N60, FQP10N60CF, FQP11N40
Keywords - FQNL1N50BBU MOSFET specs
FQNL1N50BBU cross reference
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FQNL1N50BBU replacement
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History: IRFP3415PBF
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