FQNL1N50BBU Datasheet and Replacement
Type Designator: FQNL1N50BBU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: TO-92L
FQNL1N50BBU substitution
FQNL1N50BBU Datasheet (PDF)
fqnl1n50bbu fqnl1n50bta.pdf
March 2001TMQFETFQNL1N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especially tailo
fqnl1n50b.pdf
March 2001TMQFETFQNL1N50B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especially tailo
Datasheet: FQI9N25CTU , FQI9N50CTU , FQI9N50TU , FQL50N40 , FQN1N50CBU , FQN1N50CTA , FQN1N60CBU , FQN1N60CTA , IRF520 , FQNL1N50BTA , FQNL2N50BBU , FQNL2N50BTA , FQP10N20 , FQP10N20CTSTU , FQP10N60 , FQP10N60CF , FQP11N40 .
Keywords - FQNL1N50BBU MOSFET datasheet
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