FQNL1N50BBU Specs and Replacement

Type Designator: FQNL1N50BBU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO-92L

FQNL1N50BBU substitution

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FQNL1N50BBU datasheet

 ..1. Size:618K  fairchild semi
fqnl1n50bbu fqnl1n50bta.pdf pdf_icon

FQNL1N50BBU

March 2001 TM QFET FQNL1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especially tailo... See More ⇒

 5.1. Size:620K  fairchild semi
fqnl1n50b.pdf pdf_icon

FQNL1N50BBU

March 2001 TM QFET FQNL1N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.27A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especially tailo... See More ⇒

Detailed specifications: FQI9N25CTU, FQI9N50CTU, FQI9N50TU, FQL50N40, FQN1N50CBU, FQN1N50CTA, FQN1N60CBU, FQN1N60CTA, IRF520, FQNL1N50BTA, FQNL2N50BBU, FQNL2N50BTA, FQP10N20, FQP10N20CTSTU, FQP10N60, FQP10N60CF, FQP11N40

Keywords - FQNL1N50BBU MOSFET specs

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