All MOSFET. FQP27P06SW82127 Datasheet

 

FQP27P06SW82127 Datasheet and Replacement


   Type Designator: FQP27P06SW82127
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 185 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-220
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FQP27P06SW82127 Datasheet (PDF)

 6.1. Size:746K  fairchild semi
 fqp27p06.pdf pdf_icon

FQP27P06SW82127

May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

 6.2. Size:726K  fairchild semi
 fqp27p06 sw82127.pdf pdf_icon

FQP27P06SW82127

May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

 6.3. Size:905K  onsemi
 fqp27p06.pdf pdf_icon

FQP27P06SW82127

FQP27P06P-Channel QFET MOSFET- 60 V, - 27 A, 70 mFeatures - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,DescriptionID = - 13.5 AThis P-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Gate Charge (Typ. 33 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF)MOSFET technology has been

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