FQP27P06SW82127 Datasheet and Replacement
Type Designator: FQP27P06SW82127
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 185 nS
Cossⓘ - Output Capacitance: 510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-220
FQP27P06SW82127 substitution
FQP27P06SW82127 Datasheet (PDF)
fqp27p06.pdf
May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored
fqp27p06 sw82127.pdf
May 2001TMQFETFQP27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored
fqp27p06.pdf
FQP27P06P-Channel QFET MOSFET- 60 V, - 27 A, 70 mFeatures - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,DescriptionID = - 13.5 AThis P-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Gate Charge (Typ. 33 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF)MOSFET technology has been
Datasheet: FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , FQP1P50 , FQP20N06TSTU , FQP22P10 , 60N06 , FQP2N30 , FQP2N50 , FQP2N60 , FQP2NA90 , FQP2P25 , FQP32N12V2 , FQP33N10L , FQP34N20L .
Keywords - FQP27P06SW82127 MOSFET datasheet
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