FQP27P06SW82127 Specs and Replacement
Type Designator: FQP27P06SW82127
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 185 nS
Cossⓘ - Output Capacitance: 510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-220
FQP27P06SW82127 substitution
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FQP27P06SW82127 datasheet
fqp27p06.pdf
May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒
fqp27p06 sw82127.pdf
May 2001 TM QFET FQP27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒
fqp27p06.pdf
FQP27P06 P-Channel QFET MOSFET - 60 V, - 27 A, 70 m Features - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, Description ID = - 13.5 A This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Gate Charge (Typ. 33 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 120 pF) MOSFET technology has been... See More ⇒
Detailed specifications: FQP19N10L, FQP19N20CTSTU, FQP19N20L, FQP1N50, FQP1N60, FQP1P50, FQP20N06TSTU, FQP22P10, 60N06, FQP2N30, FQP2N50, FQP2N60, FQP2NA90, FQP2P25, FQP32N12V2, FQP33N10L, FQP34N20L
Keywords - FQP27P06SW82127 MOSFET specs
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