All MOSFET. FQP58N08 Datasheet

 

FQP58N08 Datasheet and Replacement


   Type Designator: FQP58N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 146 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 57.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-220
 

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FQP58N08 Datasheet (PDF)

 ..1. Size:618K  fairchild semi
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FQP58N08

December 2000TMQFETQFETQFETQFETFQP58N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 57.5A, 80V, RDS(on) = 0.024 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology is esp

Datasheet: FQP44N10F , FQP4N20 , FQP4N25 , FQP4N50 , FQP4N60 , FQP4N90 , FQP4P25 , FQP55N06 , IRFB4227 , FQP5N20 , FQP5N20L , FQP5N30 , FQP5N40 , FQP5N50C , FQP5N80 , FQP5N90 , FQP5P10 .

History: PTA08N100 | RU60120R

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