FQP58N08 Specs and Replacement

Type Designator: FQP58N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 146 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 57.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO-220

FQP58N08 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQP58N08 datasheet

 ..1. Size:618K  fairchild semi
 fqp58n08.pdf pdf_icon

FQP58N08

December 2000 TM QFET QFET QFET QFET FQP58N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57.5A, 80V, RDS(on) = 0.024 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology is esp... See More ⇒

Detailed specifications: FQP44N10F, FQP4N20, FQP4N25, FQP4N50, FQP4N60, FQP4N90, FQP4P25, FQP55N06, 10N60, FQP5N20, FQP5N20L, FQP5N30, FQP5N40, FQP5N50C, FQP5N80, FQP5N90, FQP5P10

Keywords - FQP58N08 MOSFET specs

 FQP58N08 cross reference

 FQP58N08 equivalent finder

 FQP58N08 pdf lookup

 FQP58N08 substitution

 FQP58N08 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.