All MOSFET. FQP5P10 Datasheet

 

FQP5P10 Datasheet and Replacement


   Type Designator: FQP5P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO-220
 

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FQP5P10 Datasheet (PDF)

 ..1. Size:644K  fairchild semi
 fqp5p10.pdf pdf_icon

FQP5P10

TMQFETFQP5P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailored to

 9.1. Size:624K  fairchild semi
 fqp5p20.pdf pdf_icon

FQP5P10

May 2000TMQFETQFETQFETQFETFQP5P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -4.8A, -200V, RDS(on) = 1.4 @VGS = -10 VThis advanced technology has been especially tailored to Low gate charge ( typical 10 nC)minimi

Datasheet: FQP58N08 , FQP5N20 , FQP5N20L , FQP5N30 , FQP5N40 , FQP5N50C , FQP5N80 , FQP5N90 , 7N65 , FQP5P20 , FQP630TSTU , FQP6N15 , FQP6N25 , FQP6N50 , FQP6N50C , FQP6N60 , FQP6N80 .

History: 2N65G-TMS2-T | DMN3024SFG | AUIRFN8405 | 2SK805 | PV601CA | P2103HVG | SLD2N65UZ

Keywords - FQP5P10 MOSFET datasheet

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