FQP5P10 Specs and Replacement

Type Designator: FQP5P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO-220

FQP5P10 substitution

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FQP5P10 datasheet

 ..1. Size:644K  fairchild semi
 fqp5p10.pdf pdf_icon

FQP5P10

TM QFET FQP5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.1. Size:624K  fairchild semi
 fqp5p20.pdf pdf_icon

FQP5P10

May 2000 TM QFET QFET QFET QFET FQP5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -4.8A, -200V, RDS(on) = 1.4 @VGS = -10 V This advanced technology has been especially tailored to Low gate charge ( typical 10 nC) minimi... See More ⇒

Detailed specifications: FQP58N08, FQP5N20, FQP5N20L, FQP5N30, FQP5N40, FQP5N50C, FQP5N80, FQP5N90, IRF630, FQP5P20, FQP630TSTU, FQP6N15, FQP6N25, FQP6N50, FQP6N50C, FQP6N60, FQP6N80

Keywords - FQP5P10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.