FQP630TSTU Specs and Replacement

Type Designator: FQP630TSTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220

FQP630TSTU substitution

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FQP630TSTU datasheet

 ..1. Size:733K  fairchild semi
 fqp630tstu.pdf pdf_icon

FQP630TSTU

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been espec... See More ⇒

 8.1. Size:705K  fairchild semi
 fqp630.pdf pdf_icon

FQP630TSTU

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been espec... See More ⇒

Detailed specifications: FQP5N20L, FQP5N30, FQP5N40, FQP5N50C, FQP5N80, FQP5N90, FQP5P10, FQP5P20, AON7408, FQP6N15, FQP6N25, FQP6N50, FQP6N50C, FQP6N60, FQP6N80, IRF40B207, IRF40H210

Keywords - FQP630TSTU MOSFET specs

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