IRF4104SPBF Datasheet and Replacement

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

PD - 97471AAUTOMOTIVE GRADEAUIRF4104AUIRF4104SFeatures Low On-ResistanceHEXFET Power MOSFET Dynamic dV/dT Rating 175C Operating TemperatureD V(BR)DSS40V Fast SwitchingRDS(on) typ.4.3m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax max. 5.5mG Lead-Free, RoHS CompliantID (Silicon Limited)120A Automotive Qualified *SID (Package Li

AUIRF4104 AUTOMOTIVE GRADE AUIRF4104S Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 4.3m 175C Operating Temperature Fast Switching max. 5.5m Fully Avalanche Rated ID (Silicon Limited) 120A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A L

Isc N-Channel MOSFET Transistor IRF4104SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt