All MOSFET. IRF4104SPBF Datasheet

 

IRF4104SPBF Datasheet and Replacement


   Type Designator: IRF4104SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-263
 

 IRF4104SPBF substitution

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IRF4104SPBF Datasheet (PDF)

 ..1. Size:376K  international rectifier
 irf4104lpbf irf4104pbf irf4104spbf.pdf pdf_icon

IRF4104SPBF

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

 ..2. Size:376K  international rectifier
 irf4104pbf irf4104spbf irf4104lpbf.pdf pdf_icon

IRF4104SPBF

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

 6.1. Size:349K  international rectifier
 auirf4104strl.pdf pdf_icon

IRF4104SPBF

PD - 97471AAUTOMOTIVE GRADEAUIRF4104AUIRF4104SFeatures Low On-ResistanceHEXFET Power MOSFET Dynamic dV/dT Rating 175C Operating TemperatureD V(BR)DSS40V Fast SwitchingRDS(on) typ.4.3m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax max. 5.5mG Lead-Free, RoHS CompliantID (Silicon Limited)120A Automotive Qualified *SID (Package Li

 6.2. Size:703K  infineon
 auirf4104 auirf4104s.pdf pdf_icon

IRF4104SPBF

AUIRF4104 AUTOMOTIVE GRADE AUIRF4104S Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 4.3m 175C Operating Temperature Fast Switching max. 5.5m Fully Avalanche Rated ID (Silicon Limited) 120A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A L

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Datasheet: FQP6N60 , FQP6N80 , IRF40B207 , IRF40H210 , IRF40R207 , IRF4104L , IRF4104LPBF , IRF4104PBF , K4145 , IRF4905LPBF , IRF4905PBF , IRF4905SPBF , IRF520NL , IRF520NLPBF , IRF520NPBF , IRF520S , IRF520SPBF .

Keywords - IRF4104SPBF MOSFET datasheet

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