IRF5803D2PBF Specs and Replacement

Type Designator: IRF5803D2PBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 550 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm

Package: SO-8

IRF5803D2PBF substitution

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IRF5803D2PBF datasheet

 ..1. Size:143K  international rectifier
 irf5803d2pbf.pdf pdf_icon

IRF5803D2PBF

PD- 95160A IRF5803D2PbF TM FETKY MOSFET & Schottky Diode l Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K l Ideal For Buck Regulator Applications VDSS = -40V 2 7 A K l P-Channel HEXFET l Low VF Schottky Rectifier 3 6 RDS(on) = 112m S D l SO-8 Footprint 4 5 G D l Lead-Free Schottky Vf = 0.51V Top View Description The FETKYTM family of Co-packaged HEXF... See More ⇒

 5.1. Size:127K  international rectifier
 irf5803d2.pdf pdf_icon

IRF5803D2PBF

PD- 94016 IRF5803D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -40V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET 3 6 RDS(on) = 112m S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.51V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky ... See More ⇒

 7.1. Size:109K  international rectifier
 irf5803.pdf pdf_icon

IRF5803D2PBF

PD-94015 IRF5803 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -40V 112@VGS = -10V -3.4A Surface Mount 190@VGS = -4.5V -2.7A Available in Tape & Reel Low Gate Charge Description These P-channel HEXFET Power MOSFETs from A 1 6 D D International Rectifier utilize advanced processing techniques to achieve t... See More ⇒

 7.2. Size:296K  infineon
 irf5803pbf.pdf pdf_icon

IRF5803D2PBF

IRF5803PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET VDSS RDS(on) (max) ID Surface Mount 112m @ VGS = -10V -3.4A Available in Tape & Reel - 40V Low Gate Charge 190m @ VGS = -4.5V -2.7A Lead-Free Halogen-Free A 1 6 D D Description These P-channel HEXFET Power MOSFETs from International 2 5 D D R... See More ⇒

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Detailed specifications: IRF540NSPBF, IRF540S, IRF540SPBF, IRF540ZLPBF, IRF540ZPBF, IRF540ZSPBF, IRF5800, IRF5801PBF-1, IRF520, IRF5804, IRF5805PBF, IRF5806PBF, IRF5EA1310, IRF5M3205, IRF5M3415, IRF5M3710, IRF5M4905

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