All MOSFET. IRF5EA1310 Datasheet

 

IRF5EA1310 Datasheet and Replacement


   Type Designator: IRF5EA1310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 176 nS
   Cossⓘ - Output Capacitance: 471 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: LCC-28
 

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IRF5EA1310 Datasheet (PDF)

 ..1. Size:174K  international rectifier
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IRF5EA1310

PD-93977HEXFET POWER MOSFET IRF5EA1310SURFACE MOUNT (LCC-28) 100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5EA1310 100V 0.036 23AFifth Generation HEXFET power MOSFETs fromLCC-28International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast

Datasheet: IRF540ZPBF , IRF540ZSPBF , IRF5800 , IRF5801PBF-1 , IRF5803D2PBF , IRF5804 , IRF5805PBF , IRF5806PBF , IRF830 , IRF5M3205 , IRF5M3415 , IRF5M3710 , IRF5M4905 , IRF5M5210 , IRF5N3205 , IRF5N3415 , IRF5N3710 .

History: AP02N60H-H | SPP03N60C3 | GSM8483 | TSM2312CX | CJQ4406 | 2N7002NXBK | IXFH74N20

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