IRF5EA1310 Specs and Replacement

Type Designator: IRF5EA1310

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 176 nS

Cossⓘ - Output Capacitance: 471 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: LCC-28

IRF5EA1310 substitution

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IRF5EA1310 datasheet

 ..1. Size:174K  international rectifier
 irf5ea1310.pdf pdf_icon

IRF5EA1310

PD-93977 HEXFET POWER MOSFET IRF5EA1310 SURFACE MOUNT (LCC-28) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5EA1310 100V 0.036 23A Fifth Generation HEXFET power MOSFETs from LCC-28 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fast... See More ⇒

Detailed specifications: IRF540ZPBF, IRF540ZSPBF, IRF5800, IRF5801PBF-1, IRF5803D2PBF, IRF5804, IRF5805PBF, IRF5806PBF, 2N60, IRF5M3205, IRF5M3415, IRF5M3710, IRF5M4905, IRF5M5210, IRF5N3205, IRF5N3415, IRF5N3710

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