All MOSFET. FQP6P25 Datasheet

 

FQP6P25 Datasheet and Replacement


   Type Designator: FQP6P25
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220
 

 FQP6P25 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQP6P25 Datasheet (PDF)

 ..1. Size:507K  fairchild semi
 fqp6p25.pdf pdf_icon

FQP6P25

April 2000TMQFETQFETQFETQFETFQP6P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, RDS(on) = 1.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been

Datasheet: IRF6201PBF , IRF620B , IRF620PBF , IRF620SPBF , IRF6215LPBF , IRF6215PBF , IRF6215SPBF , FQP6N90 , IRFB4227 , FQP70N08 , FQP7N10 , FQP7N10L , FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C .

History: 2N7002C1D

Keywords - FQP6P25 MOSFET datasheet

 FQP6P25 cross reference
 FQP6P25 equivalent finder
 FQP6P25 lookup
 FQP6P25 substitution
 FQP6P25 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.