FQP6P25 Specs and Replacement

Type Designator: FQP6P25

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-220

FQP6P25 substitution

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FQP6P25 datasheet

 ..1. Size:507K  fairchild semi
 fqp6p25.pdf pdf_icon

FQP6P25

April 2000 TM QFET QFET QFET QFET FQP6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.0A, -250V, RDS(on) = 1.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been ... See More ⇒

Detailed specifications: IRF6201PBF, IRF620B, IRF620PBF, IRF620SPBF, IRF6215LPBF, IRF6215PBF, IRF6215SPBF, FQP6N90, IRFB4227, FQP70N08, FQP7N10, FQP7N10L, FQP7N20, FQP7N20L, FQP7N40, FQP7N60, FQP7N65C

Keywords - FQP6P25 MOSFET specs

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