FQP90N10V2 Specs and Replacement

Type Designator: FQP90N10V2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 492 nS

Cossⓘ - Output Capacitance: 1180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-220

FQP90N10V2 substitution

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FQP90N10V2 datasheet

 ..1. Size:919K  fairchild semi
 fqp90n10v2 fqpf90n10v2.pdf pdf_icon

FQP90N10V2

QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 90 A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 147 nC) planar stripe, DMOS technology. Low Crss ( typical 300 pF) This advanced technology has been especially tail... See More ⇒

 8.1. Size:665K  fairchild semi
 fqp90n08.pdf pdf_icon

FQP90N10V2

January 2001 TM QFET QFET QFET QFET FQP90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 71A, 80V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 200 pF) This advanced technology has been ... See More ⇒

Detailed specifications: FQP7N10L, FQP7N20, FQP7N20L, FQP7N40, FQP7N60, FQP7N65C, FQP7N80, FQP7P20, IRF9540, FQP9N08, FQP9N08L, FQP9N15, FQP9N25C, FQP9N50, FQPF10N20, FQPF10N60CF, FQPF10N60CT

Keywords - FQP90N10V2 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.