All MOSFET. FQP90N10V2 Datasheet

 

FQP90N10V2 Datasheet and Replacement


   Type Designator: FQP90N10V2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 147 nC
   tr ⓘ - Rise Time: 492 nS
   Cossⓘ - Output Capacitance: 1180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220
 

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FQP90N10V2 Datasheet (PDF)

 ..1. Size:919K  fairchild semi
 fqp90n10v2 fqpf90n10v2.pdf pdf_icon

FQP90N10V2

QFETFQP90N10V2/FQPF90N10V2100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 90 A, 100V, RDS(on) = 0.01 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 147 nC)planar stripe, DMOS technology. Low Crss ( typical 300 pF)This advanced technology has been especially tail

 8.1. Size:665K  fairchild semi
 fqp90n08.pdf pdf_icon

FQP90N10V2

January 2001TMQFETQFETQFETQFETFQP90N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 71A, 80V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 200 pF)This advanced technology has been

Datasheet: FQP7N10L , FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 , K3569 , FQP9N08 , FQP9N08L , FQP9N15 , FQP9N25C , FQP9N50 , FQPF10N20 , FQPF10N60CF , FQPF10N60CT .

History: CJ2310

Keywords - FQP90N10V2 MOSFET datasheet

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