All MOSFET. FQPF5N15 Datasheet

 

FQPF5N15 Datasheet and Replacement


   Type Designator: FQPF5N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220F
 

 FQPF5N15 substitution

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FQPF5N15 Datasheet (PDF)

 ..1. Size:743K  fairchild semi
fqpf5n15.pdf pdf_icon

FQPF5N15

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been e

 8.1. Size:858K  fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQPF5N15

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 8.2. Size:556K  fairchild semi
fqpf5n20l.pdf pdf_icon

FQPF5N15

December 2000TMQFETQFETQFETQFETFQPF5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 8.3. Size:758K  fairchild semi
fqpf5n30.pdf pdf_icon

FQPF5N15

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been e

Datasheet: FQPF4N50 , FQPF4N60 , FQPF4N80 , FQPF4N90 , FQPF4P40 , FQPF50N06 , FQPF50N06L , FQPF55N10 , IRF1404 , FQPF5N20 , FQPF5N20L , FQPF5N30 , FQPF5N50 , FQPF5N50CFTU , FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU .

History: ZXMP3F30FH | UPA1902 | IRFHS9301PBF | P2804HVG | SUD50N02-06P | P2504BDG | LNC08R085

Keywords - FQPF5N15 MOSFET datasheet

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