Справочник MOSFET. FQPF5N15

 

FQPF5N15 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF5N15
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 32 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для FQPF5N15

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF5N15 Datasheet (PDF)

 ..1. Size:743K  fairchild semi
fqpf5n15.pdfpdf_icon

FQPF5N15

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been e

 8.1. Size:858K  fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdfpdf_icon

FQPF5N15

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 8.2. Size:556K  fairchild semi
fqpf5n20l.pdfpdf_icon

FQPF5N15

December 2000TMQFETQFETQFETQFETFQPF5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 8.3. Size:758K  fairchild semi
fqpf5n30.pdfpdf_icon

FQPF5N15

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been e

Другие MOSFET... FQPF4N50 , FQPF4N60 , FQPF4N80 , FQPF4N90 , FQPF4P40 , FQPF50N06 , FQPF50N06L , FQPF55N10 , IRF1404 , FQPF5N20 , FQPF5N20L , FQPF5N30 , FQPF5N50 , FQPF5N50CFTU , FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU .

History: HM3416B | AFN3406AS | AG4N60S

 

 
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