All MOSFET. FQS4410TF Datasheet

 

FQS4410TF Datasheet and Replacement


   Type Designator: FQS4410TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: 8-SOP
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FQS4410TF Datasheet (PDF)

 ..1. Size:598K  fairchild semi
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FQS4410TF

May 2000TMQFETQFETQFETQFETFQS4410Single N-Channel, Logic Level, Power MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 30V, RDS(on) = 0.0135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 145 pF)This advanced t

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History: CHM85A3PAGP | TK7P65W | SFFX054Z

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