FQS4410TF Specs and Replacement

Type Designator: FQS4410TF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 165 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: 8-SOP

FQS4410TF substitution

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FQS4410TF datasheet

 ..1. Size:598K  fairchild semi
 fqs4410tf.pdf pdf_icon

FQS4410TF

May 2000 TM QFET QFET QFET QFET FQS4410 Single N-Channel, Logic Level, Power MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 30V, RDS(on) = 0.0135 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 145 pF) This advanced t... See More ⇒

Detailed specifications: FQPF9N30, FQPF9N50, FQPF9N50CT, FQPF9N50CYDTU, FQPF9N50T, FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU, 5N60, FQT13N06LTF, FQT13N06TF, FQT1N60CTFWS, FQT1N80TFWS, FQT2P25TF, FQT3P20TF, FQT4N20LTF, FQT4N20TF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.